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(R)
VN05NSP
HIGH SIDE SMART POWER SOLID STATE RELAY
T YPE VN05NSP
s
V DSS 60 V
R DS(on) 0.18
I OUT 13 A
V CC 26 V
s s s s s
OUTPUT CURRENT (CONTINUOUS): 13 A @ Tc=25oC 5 V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER DISSIPATION
10
1
DESCRIPTION The VN05NSP is a monolithic devices made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. BLOCK DIAGRAM
PowerSO-10
June 1998
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ABSOLUTE MAXIMUM RATING
Symb ol V (BR)DSS I OUT IR I IN -V CC I STAT V ESD P tot Tj T s tg Parameter Drain-Source Breakdown Voltage Output Current (cont.) Reverse Output Current Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k, 100 pF) Power Dissipation at T c 25 C Junction Operating Temperature Storage Temperature
o
Valu e 60 13 -13 10 -4 10 2000 56 -40 to 150 -55 to 150
Unit V A A mA V mA V W
o o
C C
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
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THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient ($) Max Max 2.2 50
o o
C/W C/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 Tj 125 oC unless otherwise specified) POWER
Symb ol VCC R on IS Parameter Supply Voltage On State Resistance Supply Current I OUT = 6 A I OUT = 6 A Off St ate On State Tj = 25 o C Tj 25 o C Test Cond ition s Min. 7 Typ . Max. 26 0.36 0.18 50 15 Un it V A mA
SWITCHING
Symb ol t d(on) tr t d(of f) tf (di/dt) on (di/dt) off Parameter Turn-on Delay Time Of Output Current Rise Time O f O utput Current Test Cond ition s I OUT = 6 A Resistive Load Input Rise T ime < 0.1 s T j = 25 o C I OUT = 6 A Resistive Load Input Rise T ime < 0.1 s T j = 25 o C Min. Typ . 15 30 20 10 0.5 2 2 4 Max. Un it s s s s A/s A/s A/s A/s
Turn-off Delay Time O f I OUT = 6 A Resistive Load o Output Current Input Rise T ime < 0.1 s T j = 25 C Fall T ime Of Output Current Turn-on Current Slope Turn-off Current Slope I OUT = 6 A Resistive Load o Input Rise T ime < 0.1 s T j = 25 C I OUT = 6 A I OUT = I OV I OUT = 6 A I OUT = I OV
LOGIC INPUT
Symb ol VI L VI H V I(hyst.) I IN V ICL Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input Current Input Clamp Voltage VI N = 5 V I IN = 10 mA I IN = -10 mA 2 0.5 250 6 -0.7 500 Test Cond ition s Min. Typ . Max. 0.8 (*) Un it V V V A V V
PROTECTIONS AND DIAGNOSTICS
Symb ol V STAT (*) V USD Parameter Status Voltage Output Low Under Voltage Shut Down Test Cond ition s I STAT = 1.6 mA 6.5 Min. Typ . Max. 0.4 Un it V V
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ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (continued)
Symb ol V SCL (*) t SC Parameter Status Clamp Voltage Switch-off T ime in Short Circuit Condition at Start-Up Over Current Average Current in Short Circuit Open Load Current Level Thermal Shut-down Temperature Reset Temperature Test Cond ition s I STAT = 10 mA I STAT = -10 mA R LOAD < 10 m Tc = 25 o C Min. Typ . 6 -0.7 1.5 5 Max. Un it V V ms
I OV I AV I OL T TSD TR
R LOAD < 10 m R LOAD < 10 m
-40 T c 125 C Tc = 85 C 5 140 125
o
o
60 1.4 180
A A mA
o
C C
o
(*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. (*) Status determination > 100 s after the switching edge.
FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125 oC the switch is automatically turned on again. In short circuit conditions the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3).
The consequences of the voltage drop across this diode are as follows:
- If the input is pulled to power GND, a negative
voltage of -VF is seen by the device. (VIL, VIH thresholds and VSTAT are increased by VF with respect to power GND). The undervoltage shutdown level is increased by VF . If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of VIH, VIL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment.
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TRUTH TABLE
INPUT Normal Operation O pen Circuit (No Load) O ver-temperature Under-voltage L H H H X O UTPUT L H H L L DIAGNOST IC H H L L H
Figure 1: Waveforms
Figure 2: Over Current Test Circuit
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Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 4: Typical Application Circuit With Separate Signal Ground
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RDS(on) vs Junction Temperature RDS(on) Vs Supply Voltage
RDS(on) Vs Output Current
Input Voltage vs Junction Temperature
Output Current Derating
Open Load vs Junction Temperature
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PowerSO-10 MECHANICAL DATA
DIM. MIN. A A1 B c D D1 E E1 E2 E3 E4 e F H h L q 0
o
mm TYP. MAX. 3.65 0.10 0.60 0.55 9.60 7.60 9.50 7.40 7.60 6.35 6.10 1.27 1.25 13.80 0.50 1.20 1.70 8o 1.80 0.047 1.35 14.40 0.049 0.543 MIN. 0.132 0.000 0.016 0.013 0.370 0.291 0.366 0.283 0.283 0.240 0.232 3.35 0.00 0.40 0.35 9.40 7.40 9.30 7.20 7.20 6.10 5.90
inch TYP. MAX. 0.144 0.004 0.024 0.022 0.378 0.300 0.374 0.291 0.300 0.250 0.240 0.050 0.053 0.567 0.002 0.071 0.067
B
0.10 A B
10 = H = A F A1 =
6
=
=
=
E = 1 5 e
0.25
M
=
E2
E3
E1
E4
=
=
A
=
SEATING PLANE DETAIL "A" Q
B
C
h
D = D1 = = = SEATING PLANE
= A1 L
DETAIL "A"
0068039-C
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .
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